Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器，尺寸7.00x5.00mm，頻率125MHZ，輸出邏輯為L(zhǎng)VPECL，電壓3.3V，頻率穩(wěn)定性20ppm，腳位6-SMD，XO時(shí)鐘晶體振蕩器（標(biāo)準(zhǔn)） ，OSC晶振，貼片差分晶振，有源晶體振蕩器，LVPECL輸出晶振，LVPECL差分晶振，差分晶體振蕩器，小體積差分晶振，六腳貼片差分晶振，低抖動(dòng)差分晶振，低功耗差分晶振，低相位差分晶振，低電壓差分晶振，高質(zhì)量差分晶振，路由器專(zhuān)用差分晶振，交換機(jī)差分晶振，網(wǎng)絡(luò)設(shè)備差分晶振，電信專(zhuān)用差分晶振，具有低功耗低抖動(dòng)的特點(diǎn)，產(chǎn)品特別適用于10/40/100G數(shù)據(jù)中心，10G以太網(wǎng)交換機(jī)/路由器，光纖通道/SAS/存儲(chǔ)，企業(yè)服務(wù)器，網(wǎng)絡(luò)，電信等領(lǐng)域。
Si535/536 XO采用了Skyworks Solutions先進(jìn)的DSPLL電路以在高速差分頻率下提供超低抖動(dòng)時(shí)鐘。 不像傳統(tǒng)的XO，每個(gè)輸出需要不同的晶體頻率，Si535/536差分晶體振蕩器使用一個(gè)固定晶體來(lái)提供寬范圍的輸出頻率。這種基于IC的方法允許晶體諧振器提供卓越的頻率穩(wěn)定性和可靠性。此外，DSPLL時(shí)鐘合成提供出色的電源噪聲抑制，簡(jiǎn)化了任務(wù)在高噪聲環(huán)境中產(chǎn)生低抖動(dòng)時(shí)鐘，常見(jiàn)于通信系統(tǒng)。基于Si535/536 IC的XO是工廠編程，因此消除了與定制振蕩器。Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器.
Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器參數(shù)表
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Supply Voltage1 | VDD | 3.3 V option | 2.97 | 3.3 | 3.63 | V | ||||||||||||||||
| 2.5 V option | 2.25 | 2.5 | 2.75 | V | ||||||||||||||||||
| Supply Current | IDD |
Output enabled LVPECL LVDS |
— — |
111 90 |
121 98 |
mA | ||||||||||||||||
| Tristate mode | — | 60 | 75 | mA | ||||||||||||||||||
| Output Enable (OE)2 | VIH | 0.75 x VDD | — | — | V | |||||||||||||||||
| VIL | — | — | 0.5 | V | ||||||||||||||||||
| Operating Temperature Range | TA | –40 | — | 85 | °C | |||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| Nominal Frequency1 | fO | LVPECL/LVDS | 100 | — | 312.5 | MHz | ||||||||||||||||
| Initial Accuracy | fi |
Measured at +25 °C at time of shipping |
— | ±1.5 | — | ppm | ||||||||||||||||
| Temperature Stability1,2 |
–7 –20 |
— — |
+7 +20 |
ppm | ||||||||||||||||||
| Aging | fa | Frequency drift over first year | ±3 | ppm | ||||||||||||||||||
|
Frequency drift over 20 year life |
— | — | ±10 | ppm | ||||||||||||||||||
| Total Stability2 | Temp stability = ±20 ppm | — | — | ±31.5 | ppm | |||||||||||||||||
| Temp stability = ±7 ppm | — | — | 20 | |||||||||||||||||||
| Powerup Time3 | tOSC | TA= –40°C — +85°C | 10 | ms | ||||||||||||||||||
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit | ||||||||||||||||
| LVPECL Output Option1 | VO | Mid-level | VDD– 1.42 | — | VDD– 1.25 | V | ||||||||||||||||
| VOD | Swing (diff) | 1.1 | — | 1.9 | VPP | |||||||||||||||||
| VSE | Swing (Single-ended) | 0.55 | — | 0.95 | VPP | |||||||||||||||||
| LVDS Output Option2 | VO | Mid-level | 1.125 | 1.20 | 1.275 | V | ||||||||||||||||
| VOD | Swing (diff) | 0.5 | 0.7 | 0.9 | VPP | |||||||||||||||||
| Rise/Fall time (20/80%) | tR,tF | — | — | 350 | ps | |||||||||||||||||
| Symmetry (duty cycle) | SYM | Differential | 45 | — | 55 | % | ||||||||||||||||
Si536有源晶振,536AB125M000DG,6G路由器晶振,Silicon差分振蕩器 尺寸圖
OscillatorCrystal產(chǎn)品特性：
可從以下頻率中選擇
100MHz至312.5MHz
集成superior的第三代DSPLL
抖動(dòng)性能和高功率
電源噪聲抑制
頻率穩(wěn)定性比高3倍
基于SAW的振蕩器
LVPECL和 LVDS輸出
3.3和2.5 V電源選項(xiàng)
行業(yè)標(biāo)準(zhǔn)5x7毫米
封裝和引腳排列
無(wú)鉛/符合RoHS標(biāo)準(zhǔn)
更多相關(guān)美國(guó)Silicon晶振型號(hào)
| Manufacturer Part Number原廠代碼 | Manufacturer品牌 | Series型號(hào) | Frequency 頻率 | Voltage - Supply電壓 | Frequency Stability頻率穩(wěn)定度 |
| 530EC200M000DG | Silicon振蕩器 | Si530 | 200MHz | 2.5V | ±7ppm |
| 531FC155M520DG | Silicon振蕩器 | Si531 | 155.52MHz | 2.5V | ±7ppm |
| 531EC156M250DG | Silicon振蕩器 | Si531 | 156.25MHz | 2.5V | ±7ppm |
| 530FC155M520DG | Silicon振蕩器 | Si530 | 155.52MHz | 2.5V | ±7ppm |
| 530BC000110DG | Silicon振蕩器 | Si530 | 148.35165MHz | 3.3V | ±7ppm |
| 530FC148M500DG | Silicon振蕩器 | Si530 | 148.5MHz | 2.5V | ±7ppm |
| 536AB125M000DG | Silicon振蕩器 | Si536 | 125MHz | 3.3V | ±20ppm |
| 535EB125M000DG | Silicon振蕩器 | Si535 | 125MHz | 2.5V | ±20ppm |
| 536EB125M000DG | Silicon振蕩器 | Si536 | 125MHz | 2.5V | ±20ppm |
| 535BB125M000DG | Silicon振蕩器 | Si535 | 125MHz | 3.3V | ±20ppm |
| 535BB156M250DG | Silicon振蕩器 | Si535 | 156.25MHz | 3.3V | ±20ppm |
| 535FB156M250DG | Silicon振蕩器 | Si535 | 156.25MHz | 2.5V | ±20ppm |
| 530EC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 530BC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530EC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530FC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 2.5V | ±7ppm |
| 530FC622M080DG | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 531AC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
| 531BC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 3.3V | ±7ppm |
| 531EC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
| 531EC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 2.5V | ±7ppm |
| 531FC311M040DG | Silicon振蕩器 | Si531 | 311.04MHz | 2.5V | ±7ppm |
| 530BC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 531BC622M080DG | Silicon振蕩器 | Si531 | 622.08MHz | 3.3V | ±7ppm |
| 531FC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530EC622M080DG | Silicon振蕩器 | Si530 | 622.08MHz | 2.5V | ±7ppm |
| 531EC312M500DG | Silicon振蕩器 | Si531 | 312.5MHz | 2.5V | ±7ppm |
| 530BC622M080DG | Silicon振蕩器 | Si530 | 622.08MHz | 3.3V | ±7ppm |
| 531AC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 3.3V | ±7ppm |
| 530AC311M040DG | Silicon振蕩器 | Si530 | 311.04MHz | 3.3V | ±7ppm |
| 530FC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 2.5V | ±7ppm |
| 531EC250M000DG | Silicon振蕩器 | Si531 | 250MHz | 2.5V | ±7ppm |
| 530AC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 530EC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530AC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 3.3V | ±7ppm |
| 530FC250M000DG | Silicon振蕩器 | Si530 | 250MHz | 2.5V | ±7ppm |
| 530BC312M500DG | Silicon振蕩器 | Si530 | 312.5MHz | 3.3V | ±7ppm |
| 531BC312M500DG | Silicon Crystal | Si531 | 312.5MHz | 3.3V | ±7ppm |
| 530FC50M0000DG | Silicon振蕩器 | Si530 | 50MHz | 2.5V | ±7ppm |
| 535AB125M000DG | Silicon振蕩器 | Si535 | 125MHz | 3.3V | ±20ppm |
| 501AAA27M0000DAF | Silicon振蕩器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501AAA27M0000DAG | Silicon振蕩器 | Si501 | 27MHz | 1.7 V ~ 3.6 V | ±50ppm |
| 501JCA100M000CAG | Silicon振蕩器 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501JCA100M000BAG | Silicon振蕩器 | Si501 | 100MHz | 3.3V | ±20ppm |
| 501HCAM032768BAF | Silicon振蕩器 | Si501 | 32.768kHz | 1.7 V ~ 3.6 V | ±20ppm |
| 501BCAM032768DAG | Silicon振蕩器 | Si501 | 32.768kHz | 3.3V | ±20ppm |
| 501JCAM032768DAG | Silicon振蕩器 | Si501 | 32.768kHz | 3.3V | ±20ppm |
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